Power mosfet semiconductor

ABSTRACT

A semiconductor device includes a source metallization, a source region of a first conductivity type in contact with the source metallization, a body region of a second conductivity type which is adjacent to the source region. The semiconductor device further includes a first field-effect structure including a first insulated gate electrode and a second field-effect structure including a second insulated gate electrode which is electrically connected to the source metallization. The capacitance per unit area between the second insulated gate electrode and the body region is larger than the capacitance per unit area between the first insulated gate electrode and the body region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation application of U.S. patentapplication Ser. No. 13/183,872, filed Jul. 15, 2011, which is aDivisional application of U.S. patent application Ser. No. 12/241,925,filed Sep. 30, 2008, both of which are incorporated herein by reference.

BACKGROUND

Field-effect controlled power switching devices such as a Metal OxideSemiconductor Field Effect Transistor (MOSFET) or an Insulated GateBipolar Transistor (IGBT) have been used for various applicationsincluding but not limited to use as switches in power supplies and powerconverters. One example illustrating the use of MOSFETS in a dc to dcconverter is given in FIG. 1.

The direction of current flow through the field-effect controlleddevices operating as switches may be different in different operatingcycles of power converters. In a “forward mode” of the field-effectcontrolled device, the pn-body diode at the body-drain junction of thefield-effect controlled device is reversely biased and the resistance ofthe device can be controlled by the voltage applied to the gateelectrode of the field-effect controlled device. In a “reversed mode” ofthe field-effect controlled device, the pn-body diode is forward biased.This results in a loss which is mainly determined by the product ofcurrent flow and voltage drop across the body diode. To minimize lossesduring reverse mode of the field-effect controlled device, i.e.,maximize efficiency of the power supply or power converter, a shuntingdevice, e.g., a diode, can be switched in parallel to the body diode ofthe field-effect-controlled switching device. Ideally, the shuntingdevice should conduct no current when the body diode is reverse-biasedand turn on at a lower voltage than the body diode when the body diodeis forward-biased. To avoid unwanted inductivities and capacitiesassociated with the required contacts and supply lines of additionaldevices, integrated power devices including e.g., a MOSFET and a diodehave been proposed.

Commonly, mainly Schottky diodes have been used as integrated shuntingdevices. A Schottky diode is characterized by a low forward voltage dropof about 0.4 V at a given typical current, a low turn-on voltage ofabout 0.3 V, fast turn off, and nonconductance when the diode is reversebiased. For comparison, a silicon pn-diode has a forward voltage drop ofabout 0.9 V at given typical current and a turn-on voltage of about 0.6V to 0.8 V. The losses during reverse biasing of a silicon MOSFET can,therefore, be reduced by connecting a Schottky-diode in parallel to thepn-body diode. However, to create a Schottky diode a metal-semiconductorbarrier must be formed. In order to obtain proper electriccharacteristics for the Schottky diode, the metal used for theSchottky-contacts likely differs from the metal used for otherstructures such as Ohmic metal-semiconductor contacts. This cancomplicate the manufacture of the device. Further, the quality of aSchottky diode is usually affected by subsequent processes required forforming the MOSFET. In addition, Schottky diode rectifiers suffer fromproblems such as high leakage current and reverse power dissipation.Also, these problems usually increase with temperature and current thuscausing reliability problems e.g., for power supply and power converterapplications. Therefore, monolithically integrated power devicesincluding Schottky barrier diodes can cause design problems.

For these and other reasons, there is a need for the present invention.

SUMMARY

According to an embodiment, a semiconductor device is provided. Thesemiconductor device includes a source metallization, a firstfield-effect structure and a second field-effect structure. The firstand second field-effect structures include a source region of a firstconductivity type which is connected to the source metallization and abody region of a second conductivity type which is adjacent to thesource region. The first field-effect structure further includes a firstgate electrode and a first insulating region which is arranged at leastbetween the first gate electrode and the body region. A firstcapacitance is formed between the first gate electrode and the bodyregion. The second field-effect structure further includes a second gateelectrode which is connected to the source metallization and a secondinsulating region which is arranged at least between the second gateelectrode and the body region. A second capacitance is formed betweenthe second gate electrode and the body region. The capacitance per unitarea of the second capacitance is larger than the capacitance per unitarea of the first capacitance.

According to another embodiment, a method for manufacturing asemiconductor device is provided. A semiconductor substrate of a firstconductivity type is provided. At least a first trench and at least asecond trench are formed in the semiconductor substrate. At least alower portion of the walls of the first trench and a lower portion ofthe walls of the second trench are covered with a first oxide layer. Aconductive region is formed at least in the lower portion of the firsttrench and at least in the lower portion of the second trench. Aprotecting region is formed on the second trench. A first insulatingregion is formed on the side walls in an upper portion of the firsttrench by a thermal oxidation process. During the thermal oxidationprocess the second trench is protected by the protecting region suchthat the semiconductor substrate forming the walls of the second trenchis not oxidized during the thermal oxidation process. A secondinsulating region is formed on the side walls in an upper portion of thesecond trench. A first gate electrode and a second gate electrode areformed in the upper portion of the first and second trench,respectively. Source regions of the first conductivity type and a bodyregion of a second conductivity type are formed such that the bodyregion is adjacent to the source regions. A source metallization isformed, which is in contact to the source regions and the second gateelectrode.

Further embodiments, modifications and improvements of the semiconductordevice and the method will become more apparent from the followingdescription and the appending claims.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the present invention and are incorporated in andconstitute a part of this specification. The drawings illustrate theembodiments of the present invention and together with the descriptionserve to explain the principles of the invention. Other embodiments ofthe present invention and many of the intended advantages of the presentinvention will be readily appreciated as they become better understoodby reference to the following detailed description. The elements of thedrawings are not necessarily to scale relative to each other. Likereference numerals designate corresponding similar parts.

FIG. 1 illustrates a circuit diagram of a typical dc to dc converterwherein semiconductor devices according to several embodiments can beused.

FIG. 2 illustrates a vertical cross-section of a semiconductor deviceaccording to an embodiment.

FIGS. 3 to 8 illustrate embodiments of semiconductor devices in verticalcross-sections.

FIGS. 9-13 illustrate manufacturing processes according to certainembodiments.

FIGS. 14A-14C illustrate numerical simulations for a semiconductordevice according to a disclosed embodiment in comparison with a standardMOSFET.

FIG. 15 illustrates a vertical cross-section of a power MOSFET accordingto an embodiment including numerically obtained current lines for normalMOSFET operation.

FIG. 16 illustrates the same vertical cross-section of the power MOSFETof FIG. 15 including numerically obtained current lines during diodeforward operation.

FIGS. 17A and 17B illustrate an inset of FIG. 16 and relatedcurrent-voltage characteristics, respectively.

FIGS. 18, 19 and 20A and 20B illustrate current voltage characteristicsfor a semiconductor device according to certain embodiments.

FIG. 21 illustrates a vertical cross-section of a semiconductor deviceaccording to an embodiment.

FIGS. 22-29 illustrate manufacturing processes for forming asemiconductor device according to certain embodiments.

FIGS. 30 and 31 illustrate plan views of the semiconductor deviceillustrated in FIGS. 28 and 29, respectively.

FIGS. 32-35 illustrate further manufacturing processes for forming asemiconductor device according to certain embodiments.

FIG. 36 illustrates a plan view of the semiconductor device illustratedin FIG. 35.

FIGS. 37-43 illustrate further manufacturing processes for forming asemiconductor device according to certain embodiments.

FIGS. 44-48 illustrate alternative manufacturing processes for forming asemiconductor device according to certain embodiments.

FIGS. 49-56 illustrate a manufacturing method for forming asemiconductor device according to certain embodiments.

FIGS. 57-58 illustrate a further manufacturing method for forming asemiconductor device according to certain embodiments.

FIGS. 59-63 illustrate still a further manufacturing method for forminga semiconductor device according to certain embodiments.

FIGS. 64-68 illustrate a further manufacturing method for forming asemiconductor device according to certain embodiments.

FIGS. 69-73 illustrate yet a further manufacturing method for forming asemiconductor device according to certain embodiments.

FIGS. 74A-F illustrate numerical simulations for semiconductor devicesaccording to certain embodiments.

DETAILED DESCRIPTION

In the following Detailed Description, reference is made to theaccompanying drawings, which form a part hereof, and in which isshowillustraten by way of illustration specific embodiments in which theinvention may be practiced. In this regard, directional terminology,such as “top,” “bottom,” “front,” “back,” “leading,” “trailing,” etc.,is used with reference to the orientation of the Figure(s) beingdescribed. Because components of embodiments of the present inventioncan be positioned in a number of different orientations, the directionalterminology is used for purposes of illustration and is in no waylimiting. It is to be understood that other embodiments may be utilizedand structural or logical changes may be made without departing from thescope of the present invention. For example, features illustrated ordescribed as part of one embodiment can be used on or in conjunctionwith other embodiments to yield yet a further embodiment. It is intendedthat the present invention includes such modifications and variations.The examples are described using specific language which should not beconstrued as limiting the scope of the appending claims. The drawingsare not scaled and are for illustrative purposes only. For clarity, thesame elements or manufacturing processes have been designated by thesame references in the different drawings if not stated otherwise.

The terms “lateral” and “horizontal” as used in this specificationintends to describe an orientation parallel to a first surface of asemiconductor substrate or body. This can be for instance the surface ofa wafer or a die.

The term “vertical” as used in this specification intends to describe anorientation which is arranged perpendicular to the first surface of thesemiconductor substrate or body.

In this specification, n-doped is referred to as first conductivity typewhile p-doped is referred to as second conductivity type. It goeswithout saying that the semiconductor devices can be formed withopposite doping relations so that the first conductivity type can bep-doped and the second conductivity type can be n-doped. Furthermore,some Figures illustrate relative doping concentrations by indicating “−”or “+” next to the doping type. For example, “n⁻” means a dopingconcentration which is less than the doping concentration of an“n”-doping region while an “n+”-doping region has a larger dopingconcentration than the “n”-doping region. Indicating the relative dopingconcentration does not, however, mean that doping regions of the samerelative doping concentration have the same absolute dopingconcentration unless otherwise stated. For example, two different n+regions can have different absolute doping concentrations. The sameapplies, for example, to an n+ and a p+ region.

Specific embodiments described in this specification pertain to, withoutbeing limited thereto, power semiconductor devices which are controlledby field-effect and particularly to unipolar devices such as MOSFETs,bipolar devices such as IGBTs and unipolar and bipolar devices havingcompensation structures such as Superjunction-MOSFETs.

The term “field-effect” as used in this specification intends todescribe the electric field mediated formation of an “inversion channel”and/or control of conductivity and/or shape of the inversion channel ina semiconductor region of the second conductivity type. Typically, thesemiconductor region of the second conductivity type is arranged betweentwo semiconductor regions of the first conductivity type and a unipolarcurrent path through a channel region between the two semiconductorregions of the first conductivity type is formed and/or controlled bythe electric field. The conductivity type of the channel region istypically changed to the first conductivity type, i.e., inverted, forforming the unipolar current path between the two semiconductor regionsof the first conductivity type.

In the context of the present specification, the semiconductor region ofthe second conductivity type in which an inversion channel can be formedand/or controlled by the field effect is also referred to as bodyregion.

In the context of the present specification, the term “field-effectstructure” intends to describe a structure which is formed in asemiconductor substrate or semiconductor device and has a gate electrodewhich is insulated at least from the body region by a dielectric regionor dielectric layer. Examples of dielectric materials for forming adielectric region or dielectric layer between the gate electrode and thebody region include, without being limited thereto, silicon oxide(SiO₂), silicon nitride (Si₃N₄), silicon oxi-nitride (SiO_(x)N_(y)),zirconium oxide (ZrO₂), tantalum oxide (Ta₂O₅), titanium oxide (TiO₂)and hafnium oxide (HfO₂).

Above a threshold voltage V_(th) between the gate electrode and the bodyregion, an inversion channel is formed and/or controlled due to thefield-effect in a channel region of the body region adjoining thedielectric region or dielectric layer. The threshold voltage V_(th)typically refers to the minimum gate voltage necessary for the onset ofa unipolar current flow between the two semiconductor regions of thefirst conductivity type, which form the source and the drain of atransistor.

In the context of the present specification, devices such asMOS-controlled diodes (MCDs), MOSFETs, IGBTs and devices havingcompensation structures such as Superjunction-MOSFETs as well asintegrated devices with different field-effect structures are alsoreferred to as field-effect structures.

In the context of the present specification, the term “MOS”(metal-oxide-semiconductor) should be understood as including the moregeneral term “MIS” (metal-insulator-semiconductor). For example, theterm MOSFET (metal-oxide-semiconductor field-effect transistor) shouldbe understood to include FETs having a gate insulator that is not anoxide, i.e., the term MOSFET is used in the more general term meaningIGFET (insulated-gate field-effect transistor) and MISFET, respectively.

FIG. 2 illustrates an embodiment of a power semiconductor device 100 ina vertical cross-section. The semiconductor device 100 includes asemiconductor substrate 1 having a first surface 30 and a second surface31 arranged opposite to the first surface 30. The semiconductorsubstrate 1 can be made of any semiconductor material suitable formanufacturing a semiconductor device. Examples of such materialsinclude, without being limited thereto, elementary semiconductormaterials such as silicon (Si), group IV compound semiconductormaterials such as silicon carbide (SiC) or silicon germanium (SiGe),binary, ternary or quaternary III-V semiconductor materials such asgallium arsenide (GaAs), gallium phosphide (GaP), indium phosphide(InP), indium gallium phosphide (InGaPa) or indium gallium arsenidephosphide (InGaAsP), and binary or ternary II-VI semiconductor materialssuch as cadmium telluride (CdTe) and mercury cadmium telluride (HgCdTe)to name few. The above mentioned semiconductor materials are alsoreferred to as homojunction semiconductor materials. When combining twodifferent semiconductor materials a heterojunction semiconductormaterial is formed. Examples of heterojunction semiconductor materialsinclude, without being limited thereto, silicon-silicon carbide (Si—SiC)and SiGe graded heterojunction semiconductor material. For powersemiconductor applications currently mainly Si, SiC and Si—SiC materialsare used.

The semiconductor substrate 1 can be a single bulk mono-crystallinematerial. It is also possible, that the semiconductor substrate 1includes a bulk mono-crystalline material and at least one epitaxiallayer formed thereon. Using epitaxial layers provides more freedom intailoring the background doping of the material since the dopingconcentration can be adjusted during deposition of the epitaxial layeror layers.

Typically, the semiconductor substrate 1 is formed by providing a singlebulk mono-crystalline body l′ of a first conductivity type (n-doped) onwhich one or more single-crystalline layers 2 are deposited epitaxially.The epitaxial layer or layers 2 accommodates or accommodate an n-dopeddrift region 40, a p-doped body region or body regions 50 and an n-dopedsource region or source regions 80. During epitaxial deposition, thedesired doping concentration of the drift region 40 can be adjusted bysupplying an appropriate amount of dopant. Different thereto, the bodyregion or regions 50 and the source region or regions 80 are typicallyformed in the epitaxially deposited drift region 40 by implantation. Itwould also be possible to form the body region 50 during epitaxialdeposition by appropriately providing dopants of the second conductivitytype (p-doped) in the desired concentration. The source region 80 canalso be formed as a substantially continuous layer by implantation orduring epitaxial deposition. If desired, the manufacturing can includeseparate epitaxial deposition processes with different dopants ofvarying concentration or with the same dopant but with varyingconcentration to form the respective functional regions. In someembodiments, the final doping concentration of the drift region 40 canvary to include doping profiles having at least one minimum or at leastone maximum or having an increasing or decreasing doping concentrationfrom a drain region 41 to the body region 50.

In other embodiments, a substrate wafer or die having the desiredbackground doping concentration of the drift region 40 is provided. Thesubstrate wafer is suitably thinned and body region 50 and source region80 are formed by implantation at the first surface 30. If desired, thesubstrate wafer can be further thinned at the second surface 31 and thedrain region 41 is formed by implantation at the second surface 31. Itwould also be possible to thin the substrate wafer after implantingsource and body regions 80, 50 only. By using this approach, anexpensive epitaxial deposition can be avoided.

The semiconductor substrate 1 of FIG. 2 includes a common drift region40 and a spaced apart source region 80 both of the n-conductivity type.Typically, the source region 80 is in electrical contact with a commonsource metallization 60, and the doping concentration of the sourceregion 80 is higher than the doping concentration of the drift region 40as indicated by the symbols “n+” and “n”. Between the drift region 40and the source region 80 a p-doped body region 50 is arranged andrespective pn-junctions between the source region 80 and the body region50 and between the body region 50 and the drift region 40 are formed. Atleast two first trenches 10 and at least a second trench 20 laterallyarranged between the two first trenches 10 extend from the source region80 through the body region 50 partially into the drift region 40.Typically, the first and second trenches 10 and 20 extend in a directionperpendicular to the illustrated cross-section. The trenches may,however, have any shape and can e.g., be formed as stripes. Typically,the trenches have, in a vertical cross-section, a width of about 0.5 μmto about 2 μm and a lateral distance of about 0.5 μm to about 2 μm.

The sidewalls and the bottom walls of the first trenches 10 and thesecond trench 20 illustrated in FIG. 2 are covered with a firstinsulating region 12 and a second insulating region 22, respectively.The insulated first and second trenches 10 and 20 are filled with afirst conductive region 11 forming a first gate electrode 11 and secondconductive region 21 forming a second gate electrode 21, respectively.The material of the first and second gate electrode 11 and 21 may be ametal such as Ti, W and Co or a material with metallic or near metallicproperties with respect to electric conductivity such as highly dopedn-type or p-type poly-Si, TiN or an electrically conductive silicidesuch as WSi₂. Due to their metallic properties each of the first andsecond gate electrodes 11 and 21 forms with the respective first andsecond insulating region 12 and 22 and the adjoining body region 50 ametal-insulator-semiconductor (MIS) structure.

In the context of the present specification, the term “gate electrode”intends to describe an electrode which is situated next to, andinsulated from a body region 50, i.e., “gate electrodes” may also bethose electrodes which are not at gate potential. The gate electrodesmay be formed on top of the semiconductor substrate 1 or between mesaregions. In the context of the present specification, the term “mesa” or“mesa region” intends to describe the semiconductor region between twoadjacent trenches extending into the semiconductor substrate in avertical cross-section.

The second gate electrode 21 is in contact with a source metallization60 which is also in contact with the source region 80 and the bodyregion 50.

In the context of the present specification, the terms “in Ohmiccontact”, “in electric contact”, “in contact” and “electricallyconnected” intend to describe that there is an Ohmic electric connectionor Ohmic current path between two regions, portion or parts of asemiconductor devices, in particular a connection of low Ohmicresistance, even if no voltages are applied to the semiconductor device.An Ohmic electric connection is characterized by a linear and symmetriccurrent-voltage (I-V) curve.

Due to the body diodes 15 formed by the pn-junctions between the bodyregion 50 and the common drift region 40, the source metallization 60and the drift region 40 are e.g., not in contact.

The first gate electrodes 11 are in contact with a gate metallization(not illustrated in FIG. 2). Further, the drift region 40 is in Ohmiccontact with a common drain metallization 42 on the second surface 31 ofthe semiconductor device 100, wherein for better contact, a highlyn-doped common drain region 41 can be arranged between the common driftregion 40 and the common drain metallization 42.

In the cross-sectional view, the device 100 has separated body regions50 and separated source regions 80. The source regions 80 adjoining afirst trench 10 and a second trench 20 may also be referred to as firstsource regions and second source regions, respectively. However, thesource regions 80 and/or the body regions 50 may also be simplyconnected at least in respective pairs. The electric contact between thesource metallization 60 and the body region 50 may e.g., only berealized in certain portions of the semiconductor device 100. In thiscase the illustrated source regions 80 between two adjacent trenches aresimply connected. Typically, even actually separated body regions 50 arein electric contact with each other. Further, even actually separatedsource regions 80 are typically in electric contact with each other too.For clarity reasons, apparently and actually separated body and sourceregions are labeled with the same respective reference sign.

According to a first embodiment, the capacitance per unit area C2between the second gate electrode 21 and the body region 50, in thefollowing also referred to as second capacitance per unit area, islarger than the capacitance per unit area C1, in the following alsoreferred to as first capacitance per unit area, between the first gateelectrode 11 and the body region 50. Typically, inversion channels canbe formed along the first and second insulating region 12 and 22 in thebody region 50. Due to the different capacitances per unit area betweenthe body region 50 and the respective gate electrodes, the voltagedifferences between the body region 50 and the respective electrode,which is required to form the inversion channel, is typically lower forthe second field-effect structure.

According to another embodiment, the permittivity of the secondinsulating region 22 is higher than the permittivity of the firstinsulating region 12 at least between the body region 50 and therespective gate electrodes 11 and 12. Thereby, the second capacitanceper unit area C2 can be larger than the first capacitance per unit areaC1 even at same geometry of the first and second trench 10 and 11. Forexample, the first insulating region 12 is made of SiO₂, Si₃N₄ orSiO_(x)N_(y), whereas the second insulating region 22 is made of HfO₂.In another example, the first and second insulating region 12 and 22 aremade of SiO₂ and Si₃N₄, respectively. The first and second insulatingregions 12 and 22 may also include several layers of differentmaterials. These layers should be chosen such that the secondcapacitance per unit area C2 is larger than the first capacitance perunit area C1.

According to yet another embodiment, the first gate electrode 11, thefirst insulating region 12, the source region 80 in contact with thesource metallization 60, the body region 50 and the drift region 40 incontact with the drain metallization 42 forms a first field-effectstructure, namely a MOSFET.

If the voltage V_(GS) between the gate metallization and sourcemetallization 60 exceeds a threshold value, an n-type inversion channel51 is formed along the first insulating region 21 in the body region 50as indicated in FIG. 3 illustrating a similar semiconductor device 100as FIG. 2 but in a different cross-section, in which the second gateelectrode 21 is also spaced apart from the source metallization 60 by adielectric portion 70. However, the second gate electrode 21 is incontact with the source metallization 60 in other portions of the device100. In other words, there is at least a second cross-section throughthe semiconductor device 100 of FIG. 3 illustrating that the sourcemetallization 60 is connected to the second gate electrode 21. Thisapplies to all Figures of the present specification in which the contactbetween the second gate electrode 21 and the source metallization 60 isnot illustrated.

According to yet another embodiment, the second gate electrode 21, whichis in contact with the source region 80 and the source metallization 60,the second insulating region 22, the body region 50 and the drift region40 in contact with the drain metallization 42 form a second field-effectstructure, which is in the following referred to as MOS-gated diode(MGD). The term “MOS-gated diode” or “MGD” as used in this specificationintends to describe a MOSFET structure with shorted gate electrode andsource electrode, i.e., a MGD is a two terminal field-effect structure.Further, the body region 50 of the MGD is typically in contact with thesource electrode 60. Typically, the MGD is connected in parallel to thebody diodes 15 formed between the body region 50 and the drain region40.

In other words, embodiments as described herein include an integratedsemiconductor device which has a body diode 15 formed between a bodyregion 50 and a common drift region 40, a first field-effect structureand a second field effect structure which is typically a MGD. The firstfield-effect structure and the second field effect structure aretypically connected to a first common metallization and a second commonmetallization. Typically, the first common metallization is electricallyconnected to the source regions 80 of the first and second field effectstructures. This metallization is therefore typically referred to assource metallization 60. The body region 50 is typically also connectedto the first common metallization. The second common metallization istypically in electrical contact with the common drift region 40. Thetotal current between the two common metallization may flow in eitherdirection through the integrated semiconductor device.

In a “forward mode” of the semiconductor device, in which the body diode15 is reversely biased, the first field-effect structure can control theresistance of the semiconductor device by the field-effect. Therefore,the first field-effect structure is also referred to as controllablefield-effect structure. To control the resistance, an appropriatevoltage difference between the first common metallization and aninsulated gate electrode 11 of the first field-effect structure isapplied or changed as known to those skilled in the art. Thereby, aninversion channel 51 within the body region 50 can be formed and/ormodified and the current blocking body diode 15 can be bypassed. Atgiven voltage difference between the first and second commonmetallization the total current flowing through the semiconductor devicecan by controlled in this way.

In a “reverse mode” or “backward mode” of the semiconductor device, thebody diode 15 is forwardly biased. Furthermore, since the body region 50and the source region 80 are shorted in many embodiments, a current canflow through the device in backward mode. Further, the insulated gateelectrode 21 of the second field-effect structure is shorted with thesource metallization 60. Thus the current cannot be controlled byapplying a control voltage to the second field-effect structure.However, an inversion channel can also be formed in the reversed modeunder specific conditions. Generally, the forming of an inversionchannel in the channel region of a p-type body region next to aninsulated gate electrode requires a positive voltage difference betweenthe insulated gate electrode and the body region V_(GB)>0. Even if thebody contact and the insulated gate electrode are electricallyconnected, a positive voltage difference can occur depending on thebuilt-in potential between the source region 80 and the body region 50,the voltage drop due to the current flow from the source region 80 tothe drain region 41, and on the work function differences between thegate material and the material of the body region 50.

Due to the resistivity of the body region 50, any current flow duringreverse mode reduces the voltage along the current path in the bodyregion 50 to values which are lower than the voltage V_(s) applied tothe source metallization 60. This typically results in a lower potentialof the body region next to the insulated gate electrode. Therefore, thevoltage difference V_(GB) increases typically with the current andcurrent density, respectively.

In certain embodiments the second field-effect structure (MGD) isdesigned such that the total current through the integratedsemiconductor device in reverse mode is, above an average current flowdensity threshold, typically dominated by a unipolar current flowing viaan inversion channel 52 along the insulating gate electrode 21.Typically, this reduces the electric losses of the integratedsemiconductor device compared to the case of a total current flow acrossthe pn-junctions of the body diode 15 during reverse mode.

Further, not the electric potential but the quasi-Fermi level of theelectrons (and that of the holes) is typically equalized between themetallic gate electrode, the metallic source electrode and the metallicbody contact, when the contacts are short-circuited. Therefore, apositive potential difference V_(GB) between a gate electrode, inparticular the second gate electrode 21, and the body region 50 can beformed even without applying an external voltage or current to thesemiconductor device 100. The gate potential V_(G) reads:

V _(G) =E_(g)(material_(body))/2+χ(material_(body))−WF(material_(gate electrode))

with work function WF, electron affinity χ and band gap E_(G).For a monocristalline silicon body and highly phosphorous dopedpolycrystalline silicon (poly-Si) electrodes, the gate potential V_(G)typically amounts to about

V _(G)=0.56 V+4.17 V-4.35 V=0.37 V.

In the context of the present specification, the term “work function”intends to describe the minimum energy (usually measured in electronvolts) needed to remove an electron from a solid to a point outside thesolid surface. This corresponds for metals to the energy needed to movean electron from the Fermi energy level, which lies within theconduction band, into vacuum. For a semiconductor material or aninsulator the work function can be defined as the sum of the electronaffinity χ and half of the band-gap, i.e., the minimum energy needed tomove an electron from the intrinsic Fermi level into vacuum.

Gate electrode materials having a work function which is lower than theabove given value of 4.35 V for highly phosphorous doped polysiliconwill produce even higher positive V_(GB) than 0.37 V. In someembodiments, the work functions of the first and second gate electrode11 and 21 are different. Typically, the work function of the second gateelectrode 21 is smaller than the work function of the first gateelectrode 11. For example, the first gate electrode 11 is made of highlydoped poly-Si, and the second gate electrode is made of TiN, TaN or Co.Typically, the electron affinity of the body region 50 is also smallerthan the work function of the first gate electrode 11. For example, thefirst gate electrode 11 and the body region 50 are made of highly dopedpoly-Si and of Si, respectively.

If the voltage difference V_(GB) between the insulated gate electrodeand the body region is larger than a threshold voltage V_(th), aninversion channel is formed along the insulated gate electrode in thebody region 50.

Generally, the threshold voltage V_(th) of a field-effect structurereduces with increasing gate capacitance per unit area and decreasingdoping concentration of the body region 50. This applies both for aMOSFET structure during “threshold connection” in forward mode(V_(GS)=V_(DS)>0) and a MOSFET structure in reverse mode (or “reversethreshold connection”, V_(DG)=V_(DS)<0) with the voltage differencesV_(GS), V_(DG) and V_(DS) between gate and source, drain and gate, anddrain and source, respectively. During “reverse threshold connection” ofthe MOSFET, the drain is used as electron source and the source is usedas electron drain. In addition to the electron transport through theinversion channel of the MOSFET, the current of the reverse bipolartransistor in the mesa and the hole current across the pn-body diodetypically contribute to the total current in reverse mode. Therefore,the threshold voltage V_(th) of the MGD is typically lower than thethreshold voltage V_(th) of the MOSFET even at same capacitance perunity area between the body region 50 and the respective gate electrode.

Further, only a weak inversion channel or weak inversion layer 52, whichhas a charge carrier concentration of about 10¹⁷ cm⁻³ to about 10¹⁸cm⁻³, is typically formed along the second insulating region 22 in thebody region 50 of the MGD.

Since the second gate electrode 21 is connected to the sourcemetallization 60 in the FIGS. 2 and 3, the lower threshold voltageV_(th) of the MGD is typically not reflected in the gate characteristicof the MOSFET with integrated MGDs. Further, the maximum rated gatevoltage of the MOSFET does not result in a lower limit for the gatethickness of the MGD.

The inversion channel is typically only formed along the secondinsulating region 22 during reverse mode. This is because the secondfield-effect structure (MGD) has a higher capacitance per unit areabetween its gate electrode and the body region than the firstfield-effect structure (MOSFET).

The voltage drop across the semiconductor device 100 can, depending onthe current density and the properties of the MGDs, typically be reducedfrom about 0.9 V of the body diode 15 to values below 0.5 V duringreverse mode of the integrated MOSFET 100. Thereby, the losses arereduced in this mode. The use of MOSFETs with integrated MGD 100 in atypical converter can therefore increase the converter efficiency. Thisis explained in more detail with reference to FIG. 1.

FIG. 1 illustrates a circuit diagram of a typical step-down dc to dcconverter, i.e., a buck converter, using MOSFETS. An input voltageU_(in) is stepped down to a lower output voltage U_(out). The topologyof the illustrated circuitry is widely used, e.g., on computermainbords, to convert a typical input voltage U_(in) of 12 V provided bythe mains adapter to the required voltages of e.g., about 1.2 V to about3.3 V of the consumers of the mainboard such as a CPU, a GPU, a DSP, aDRAM and driver chips. The buck converter has four operating phaseswhich are controlled by a driver IC 95. In a first phase the highsideMOSFET switch 96 is switched on and the two lowside MOSFET switches 97are switched off. This causes a linear current increase through theinductor 98 charging the capacitance 99. If the output voltage U_(out)exceeds a certain threshold, the driver IC 95 switches the MOSFET 96 offwhich initiates the second phase. Now the load current flows in thefreewheel circuit formed by the inductor 96, the capacitance 97 and thebody diodes of the two MOSFETs 97. In this phase the MOSFETs 97 are inreverse mode, and the losses are mainly caused by the body diodes whichare now biased in forward direction. Typically, the forward voltage dropof the body diode of a silicon MOSFET is for typical currents about 0.9V or even larger. After a dead time the MOSFETs 97 are switched on bythe driver IC 95 to reduce losses (third phase). If the output voltagefalls below a limit the MOSFETs 97 are switched off again (fourth phase)prior to returning to the first phase. To minimize the losses of thebuck converter, MOSFETs 100 with integrated second field effect deviceshaving a low voltage drop if the body diode is switched in forwarddirection can be used. This applies also to other type of converterssuch as step-up converters and single ended primary inductanceconverters.

Except for the capacitances per unit area, the technical features can beoptimized independently for the first and second field-effectstructures. Examples of such features include but are not limited to theleakage current, the blocking ability, the quality of Ohmic contacts andrelated temperature dependencies.

Further, different threshold voltages for the MOSFETs which are higherthan the threshold voltage of the second field effect structure (MGD) ona single integrated circuit may be required. This can e.g., be obtainedby selectively providing channel implants for the first field effectstructures forming the respective transistors. Additional channelimplants, i.e., the doping of the channel region 51 to adjust thethreshold voltage of the first field effect structures, may be used forthose MOSFETS which have different threshold voltage requirementsV_(th).

Further, the concept of integrating a first field-effect structurehaving a first capacitance per unit area between its gate electrode anda body region and a second field-effect structure, which includes ashorted gate electrode and source electrode and has a capacitance perunit area between its gate electrode and the body region which is higherthan the first capacitance per unit area, is not limited to theillustrated vertical field-effect structures with gate electrodesarranged in trenches as illustrated in FIGS. 2 and 3 (VMOSFET, UMOSFET).In further embodiments the principles disclosed herein are also used inlateral devices such as a lateral MOSFET and in planar vertical devices,i.e., devices with non-buried gate electrode, such as a DMOSFET.

In other words, the semiconductor device 100 includes a sourcemetallization 60 in contact with a source region 80 of a firstconductivity type, a drain region 41 of the first conductivity type anda body region 50 of a second conductivity type. The body region 50respectively adjoins the source region 80 and the drift region 40. Thesemiconductor device 100 further includes a first field-effect structurewith a first gate electrode 11 and a first capacitance per unit area C1between the first gate electrode 11 and the body region 50, and a secondfield-effect structure with a second gate electrode 21 and a secondcapacitance per unit area C2 between the second gate electrode 21 andthe body region 50 which is larger than the first capacitance per unitarea C1.

According to certain embodiments, the semiconductor device is apower-semiconductor device which includes a plurality of monolithicallyintegrated first and second field-effect structures. In otherembodiments, the semiconductor device 100 includes only one first and/orone second field-effect structure.

Referring again to FIG. 3 still a further embodiment will be explained.Accordingly, the thickness d₂ of the second insulating region 22 betweenthe second gate electrode 21 and the body region 50, in the followingalso referred to as second thickness, is smaller than the thickness d₁of the first insulating region 12 between the first gate electrode 11and the body region 50. In the following the thickness d₁ is alsoreferred to as first thickness. Thereby, the second capacitance per unitarea C2 can be larger than the first capacitance per unit area C1 evenif the same electrically insulating material is used for forming thefirst and second insulating region 12 and 22.

For example, for a silicon oxide as gate insulating material, the firstthickness d1 is typically in a range between about 10 nm and about 100nm.

The second thickness d₂ can be significantly smaller, e.g., by a factorof two or more than a typical thickness of a silicon oxide layer as gateinsulator of about 40 nm to 60 nm in standard power MOSFETs. In certainembodiments, the second thickness d₂ is smaller than about 8 nm. Thesecond thickness d₂ may be smaller than 6 nm or 4 nm and may even besmaller than 1 nm.

Typically, the second thickness d2 is smaller than the maximum thicknessof the second insulating region 22 between the second gate electrode 21and the common drift region 40. Further, the first thickness d1 istypically smaller than the maximum thickness of the first insulatingregion 22 between the first gate electrode 11 and the common driftregion 40.

FIG. 4 illustrates a vertical cross-section of a semiconductor device100 according to further embodiments. The illustrated semiconductordevice 100 differs from the one illustrated in FIG. 3 in that itincludes two second trenches 20 next to each other. Further, in each ofthe first and second trenches 10 and 20 field plates 16 and 26 wereformed below the respective gate electrodes 11 and 21. The two secondtrenches 20 are spaced to respective neighboring first trenches 10 by amesa region of a first lateral distance p₁. In addition, the two secondtrenches 20 are spaced apart by a mesa region of a second lateraldistance p₂. In certain embodiments, the first lateral distance p₁ islarger than the second lateral distance p₂ and/or the second fieldplates 26 extends vertically deeper into the common drift region 40 thanthe first field plates 16. Since the second gate electrodes 21 and thefirst and second field plates 16 and 26 are on source potential, thedrift region 40 in the mesa between the two second trenches 20 isscreened against high electric field strength in forward mode.Consequently, the second field effect structure, i.e., the integratedMGD, is typically better protected against Avalanche breakdown than thefirst field effect structure.

Due to the arrangement of the first and second trenches 10 and 20, thereare four first body sub-regions 50 a which adjoin the first insulatingregion 12 and one second body sub-region 50 b which does not adjoin thefirst insulating region 12 but adjoins the second insulating regions 22of the neighboring second trenches 20. In some embodiments the secondbody sub-region 50 b has lower doping concentration than the first bodysub-regions 50 a. This will typically further reduce the thresholdvoltage V_(th) for forming the inversion channel of the second fieldeffect structure and hence the voltage drop during reverse mode.

The semiconductor device 100 illustrated in FIG. 5 differs from the oneillustrated in FIG. 3 in the geometry of the insulating regions 12 and22 in a lower portion of the first and second trenches 10 and 20,respectively. Typically, both insulating regions include two respectiveinsulating portions, a first and a second insulating portion 12 a and 22a between the body region 50 a or 50 b and the respective gate electrode11 and 22 and first and second insulating bottom portion 12 c and 22 cfilling at least the space between the bottom of the trenches 10 and 20and the respective gate electrodes 11 and 21. In some embodiments, thelateral and/or vertical thickness of the insulating bottom portions 12 cand 22 c below the respective gate electrodes exceeds the respectivethickness of the insulating portions 12 a and 22 a in a verticalcross-section. Thereby, the field strength in the bottom portions 12 cand 22 c can be reduced. Typically, the lateral and/or verticalthickness of the first and second insulating bottom portions 12 c and 22c is in a range of about 50 nm to about 300 nm.

With respect to FIG. 6 further embodiments will be explained. Thesemiconductor device 100 illustrated in a vertical cross-sectionincludes an n-type source region 80 in contact with a common sourcemetallization 60. The source region 80 adjoins a p-type body region 50which adjoins a common n-type drift region 40. Between the body region50 and the drift region 40 a body diode (not illustrated) is formed.Within the drift region 40 a third conductive region 25 of the p-type isburied. Typically the doping concentration of the third conductiveregion 25 is higher than the doping concentration of the body region 50.Further, the third conductive region 25 and the body region 50 arespaced apart from each other. Due to the formed pn-junction between thethird conductive region 25 and the drift region 40, a space chargeregion or layer is typically formed next to the pn-junction. A secondtrench 20 extends from the source region 80 through the body region 50and at least partially into the drift region 40. The second trench 20adjoins the third conductive region 25 and includes an insulating layer22 and a conductive plug 21, which forms an Ohmic connection between thesource metallization 60 and the third conductive region 25. Theinsulating layer 22 is only arranged on the side walls of the secondtrench 20 and insulates the conductive plug 21 from the body region 50and the source region 50. The body region 50 may be connected to thesource metallization 60.

In some embodiments as described herein, the conductive plug 21, theinsulating layer 22 and the body region 50 form a second field effectstructure which is typically a MGD having a second capacitance per unitarea C2 between the conductive plug 21 forming a second gate electrode21 and the body region 50.

In certain embodiments, the semiconductor device 100 further includes atleast one first trench 10 which extends from the source region 80through the body region 50 partially into the drift region 40. In FIG. 6two first trenches 10 are exemplarily illustrated. The side walls andthe bottom walls of the first trenches 10 are covered with a firstinsulating layer 12. The insulated first trenches 10 are filled withfirst conductive regions forming first gate electrodes 11.

In some embodiments as described herein, the second and first trenchescan also be described as a trench and a further trench, respectively. Inthis case, the second field-effect structure and the first field-effectstructure form a field-effect structure and a further field-effectstructure, respectively.

Typically the capacitance C1 per unit area between the first gateelectrode 11 and the body region 50 is lower than the second capacitanceper unit area C2. This can again be achieved by choosing an appropriateeffective thickness and/or permittivity of the first insulating region12 and the insulating layer 22. In addition to the common sourcemetallization 60, the semiconductor device 100 typically includes acommon drain metallization 42 and a common gate metallization (notillustrated) in electrical contact with the first gate electrodes 11 sothat the device 100 can be operated as a three-terminal MOSFET. As theMOSFET 100 includes a MGD which is connected in parallel to the bodydiode, the integrated MOSFET 100 has typically a lower voltage dropduring reverse mode compared to standard MOSFETs. This favors the use ofthe integrated MOSFET 100 as a low-side MOSFET 97 in a converter asillustrated in FIG. 1.

In some embodiments, the first trench 10 further includes in the lowerportion a conductive field plate 16 in contact with the sourcemetallization 60 to allow a higher doping concentration and/or thinnerdrift region 40 while keeping the breakdown voltage substantiallyconstant. The field plates 16 and the third conductive region 25 screenthe body region 50 during forward mode. Further, the third conductiveregion 25 can carry an Avalanche current. Therefore, the body region 50may also be floating.

FIG. 7 illustrates, in a vertical cross-section, a similar MOSFET withintegrated MGDs 100 as illustrated in FIG. 6. In addition, the first andsecond inversion channels 51 and 52 are illustrated, which can be formedin the body region 50 by the field-effect such that they extend from thesource region 80 to the drift region 40. For clarity reasons not allinversion channels of the semiconductor device 100 are labeled with therespective reference signs. In certain embodiments, the dopingconcentration of the channel regions 52 is lower than the dopingconcentration of the remaining part of the body region 50 to furtherreduce the threshold voltage of the second inversion channels 52. Due tothe formed inversion channels 52 of the MGD during reverse mode, theamount of stored minority carriers (reverse recovery charge) istypically also reduced compared to standard MOSFETs. A reduction of thestored charge generally results in a reduction of the current peakduring commutation. Thus, the switching behaviour of the MOSFET withintegrated MGDs 100 can be improved compared to standard MOSFETs.Accordingly, the MOSFET with integrated MGDs 100 can also be used aslow-side switch with improved switching behaviour in a converter circuitarrangement.

Further, first doped regions 27, second doped regions 28 and third dopedregions 29 are illustrated in the cross-section of FIG. 7. The firstdoped regions 27 adjoin the source metallization 60, the source region80, the body region 50 and the insulating layer or second insulatingregion 12. The second doped regions 28 adjoin the third conductiveregion 62, the body region 50, the common drift region 40, theinsulating layer 12 and a respective third doped region 29. The thirddoped regions 29 are arranged between the body region 50 and the driftregion 40 on both sides of each conductive plug 21. In certainembodiments, each of the first, second and third doped regions 27, 28and 29 are regions of the first conductivity type, i.e., n-dopedregions, having a doping concentration which is typically higher thanthe doping concentration of the drift region 40. Thereby, the length L₂of the second inversion channel 52, which can be formed in the bodyregion 50 along the second insulating region 22, can be tailoredindependently from the length L₁ of the first inversion channel 51,which can be formed in the body region 50 along the insulating layer 12.According to another embodiment, the length L₂ is smaller than thelength L₁. Thereby, the electric resistance of the second inversionchannel 52 can be further reduced. This results in even lower losses ofthe MOSFET with integrated MGDs 100 during reverse mode as desirable formany applications e.g., as lowside MOSFET 97 in the converter of FIG. 1.

In certain embodiments, a conductive contact layer 62 is arrangedbetween the conductive plug 21 and the third conductive region 25 toimprove the electric contact and to reduce the resistance between thesource metallization 60 and the third conductive region 25. Typically,the contact layer 62 has a metallic or near metallic conductivity. Forexample, the contact layer 62 can be made of a metal, a silicide orTi/TiN for improving the contact between a poly-Si plug 21 and a p-typethird conductive region 25 made of silicon.

In another embodiment, some of the first doped regions 27 a are of thep-type as illustrated in FIG. 8, which also illustrates a cross-sectionthrough a MOSFET with integrated MGDs 100. If the device 100 is notdesigned to have floating body regions 50, the p-type first dopedregions 27 a can be used for electrically connecting the body region 50and the source metallization 60. The cross-section of FIG. 8 may alsocorrespond to a further cross-section of the MOSFET with integrated MGDs100 of FIG. 7. In other words, the shortening of the vertical extensionof the second inversion channel and the electrical connecting of thebody region 50 may be done in different portions of the semiconductordevice 100.

With respect to the FIGS. 9-13 an embodiment of a method formanufacturing a MOSFET with integrated MGDs 100 is explained. FIG. 9illustrates a vertical cross-section of the semiconductor device 100after providing a semiconductor substrate which includes an n-typecommon drain region 41 and an n-type common drift region 40 and afterfurther processes including forming first and second trenches 10 and 20,forming p-type body regions 50 and n-type source regions 80 and formingdielectric portions 70. In each of the first trenches 10 a field plate16, a gate electrode 11 and an insulating region 12 were formed.Further, the second trenches 20 were etched through the source region 80and the body region 50 partially into the common drift region 40. Allthese processes were performed using standard processes for formingvertical trench MOSFETS known to those skilled in the art.

Subsequently, an insulating layer 22 is arranged on the side walls andthe bottom walls of the second trenches 20. This can be done by athermal oxidation of the semiconductor substrate and/or by deposition ofan insulating material. In some embodiments the thickness of theinsulating layer 22 between the mesa and the recess of the secondtrenches 20 is smaller than the thickness of the first insulating region12 between the body regions 50 and the first gate electrode 11. Incertain embodiments the permittivity of the insulating layer 22 ishigher than the permittivity of the first insulating region 12. FIG. 10illustrates the semiconductor device 100 after a subsequent ionimplantation process for forming p-type third conductive regions 25 inthe drift region 40. The third conductive regions 25 adjoin theinsulating layer 22 on the bottom of the second trench 20.

Thereafter, an anisotropic etching process is carried out to remove theinsulating layer 22 on the bottom of the second trenches 20 asillustrated in FIG. 11.

Subsequently, a conductive material such as highly doped poly-Si isdeposited in the second trench 20 for forming a conductive plug 21. Thedielectric layer 22 and the conductive plug are etched back in an upperportion of the second trenches 20 to expose the source regions 80. Thisresults in a structure as illustrated in FIG. 12.

Alternatively, the third conductive regions 25 can be formed afteretching the insulating layer 22 on the bottom of the second trench 20and filling the second trench 20 with poly-Si, e.g., by diffusion ofboron out of the deposited poly-Si.

Finally, a common source metallization 60 and a common gatemetallization (not illustrated) are formed on the top side and a commondrain metallization 42 is formed on the bottom side of the semiconductordevice 100 as illustrated in FIG. 13.

Since standard processes are used prior to etching the second trenches20 the pitch and/or the lateral distance between two first trenches 10next to each other has typically not to be increased compared tostandard MOSFETS without integrated MGDs. Still the voltage drop duringreverse mode (reversed current flow) can be significantly reduced aswill be explained with respect to FIG. 14.

FIG. 14A illustrates, within the rectangular section 5, the currentlines 19 of an integrated MOSFET as illustrated in FIG. 13 withintegrated MGDs according to a numerical simulation. The insulatinglayer 22 is too thin (5 nm) to be clearly visible. For comparison thecurrent lines 19 during reversed mode of the standard MOSFET with thesame pitch is given in FIG. 14B. As can be seen the current in FIG. 14Ais dominated by an electron current flowing from the source region 80through the inversion channel 52 (not labelled) in the body region 50 toand through the drift region 40. In contrast thereto, the current in thestandard MOSFET is bipolar under the same condition due the current flowacross the body diode. As a result of the additionally formed inversionchannel 52, the voltage drop across the MOSFET with integrated MGDs isonly half as large as for the standard MOSFET in a wide current range inreverse mode. The corresponding current density-voltage-characteristicsof FIGS. 14A and 14B are plotted in FIG. 14C as curves A and B,respectively.

Field plates may also additionally be incorporated in semiconductordevices as illustrated in FIG. 4. This is further illustrated in FIG. 15illustrating in a vertical cross-section a section of a power-MOSFET 100with a plurality of integrated MOSFETS and MGDs. Each of the illustratedfirst and second trenches 10 and 20 includes in its lower portion afield plate 16 and 26, respectively. The field plates 16 and 26 areconnected to the source metallization as indicated by the reference sign“S”. The first gate electrodes 11 are connected to a not illustratedgate metallization as indicated by the reference sign “G”. For sake ofclarity, only the first two trenches from the left of FIG. 15 are fullydesignated with reference signs. A more detailed section of thestructure is given below in FIG. 17.

According to a further embodiment, the plurality of first field-effectstructures (MOSFETS) and second field-effect structures (MGDs) arearranged in a regular pattern. Typically, this regular pattern at leastextends over the major portion of the semiconductor device 100. Theborder area of the device may, however, deviate from the pattern e.g.,to compensate boundary effects. In FIG. 15 every fourth field-effectstructure is a MGD. As can be seen from the additionally plottedelectron current lines 19 during normal MOSFET operation of the MOSFET100, i.e., during forward mode in which the electrons flow from sourcemetallization 60 through the source region 80, the inversion channels 51in the body region 50 and the drift region 40 to the drain metallization42, every mesa contributes to the total current flow. A closerinspection of the current lines 19 reveals that the integration of MGDsincreases the resistance in forward mode R_(on) only by 22% which islower than the expected increase of 33%.

On the other hand, during reversed current (reverse mode) the electroncurrent flows from the drain metallization 42 through the drift region40, the inversion channel 52 in the body region 50 next to the only 5 nmthick gate insulation 22 and the source region 80 to the sourcemetallization 60. This is illustrated in FIG. 16 illustrating the sameMOSFET as in FIG. 15 but during reverse mode. Due to the lower voltagedrop across the inversion channel 52 compared to the body diode of theMOSFET, the losses during reverse mode can be reduced significantly.This depends both on the arrangement of the MGDs within the MOSFET 100and their characteristics. Typically, the losses during reverse modedecrease with increasing fraction of MGDs and are lower for a regularpattern arrangement of MGDs and MOSFETs compared to a clusteredarrangement, i.e., an arrangement of MGDs and MOSFETs in different partsof the semiconductor device 100. A clustered arrangement of MOSFETS andMGDs may e.g., be used if the MOSFETS and MGDs have to be optimizeddifferently.

Further, R_(on) will typically increase with increasing fraction ofMGDs. The ratio between the MOSFETS and MGDs is typically chosen to bein a range between about 1:1 to 100:1 in regular pattern and clusteredarrangements of MGDs and MOSFETS. Thereby, the trade-off between R_(on)and electric losses in reversed mode can be balanced in accordance withthe MOSFET specifications for an application or circuitry.

In FIG. 17A the geometry and the current flow during reverse mode of aMGD is illustrated in more detail in the section 5 of FIG. 16.Typically, the p-type body region 50 includes a higher doped p-typecontact portion 55. The thickness d₂ of the second insulating region 22between the second gate electrode 21 at source potential and the bodyregion 50, which is also connected to source, is for illustrativepurposes higher than in FIGS. 14 and 15 and amounts to 35 nm. In FIG.17B the hole current density (curve a), the electron current density(curve b) and the total current density (curve c) for the MGD of FIG.17A are plotted as function of the voltage drop across the MGD. Due tothe formed inversion channel within the body region 50, the totalcurrent is dominated by a unipolar electron current, i.e., the electroncurrent contributes to more than 90% to the total current, above anaverage current flow density of about 10 μA/mm² in the common driftregion 40. This depends on the thickness and/or the permitivitty of thesecond insulating region 22 between the second gate electrode 21 and thebody region 50. In certain embodiments the current through thesemiconductor device in reverse mode (forward bias of the body diode 15)is dominated by a unipolar current above an average current flow densityin the drift region 40 of about 1 mA/mm².

FIG. 18 illustrates the current density-voltage characteristics of asilicon MGD as in FIG. 17A with poly-Si as material of the second gateelectrode 21 and SiO₂ as material of the second insulating region 22 independence of the second thickness d₂. At given current density thevoltage drop decreases with decreasing second thickness d₂. At athickness d₂ of 5 nm, the current density-voltage characteristics of theMGD are, in a wide current density range, almost identical to aTrench-MOS-Barrier-Schottky-diode (TMBS-diode) with a work function of4.75 eV. For a 3 nm thick gate oxide the losses are even lower. Thus anintegrated MGD can replace an integrated Schottky-diode. Thereby, theaforementioned disadvantages of an integrated Schottky-diode can beavoided. Further, the losses in reverse mode can even further bereduced.

FIG. 19 illustrates the current density-voltage characteristics duringreverse mode of an integrated power semiconductor device having a ratiobetween MOSFETS and MGDs of 9:1 in dependency of the second thicknessd₂. The MOSFETS have a first thickness d₁ of 45 nm. Up to a currentdensity of about 10 A/mm² the losses can be reduced significantly by theMGDs having a lower second thickness d₂.

In FIG. 20 the current per channel width-voltage characteristics of atypical silicon MGD as illustrated in FIG. 17A are plotted for secondthicknesses d₂ of 5 nm, 8 nm and 35 nm. FIGS. 20A and 20B illustrate alinear plot and a linear-log plot, respectively. The threshold voltageV_(th) of a semiconductor device can be defined as the intersection of asuitable tangent with the abscissa in the linear plot as illustrated forthe 8-nm-curve in FIG. 20A. This results in a threshold voltage V_(th)for the MGD having a second thickness d2 of 8 nm of about 0.35 V.Another possibility of defining the threshold voltage V_(th) bases on arequired current per channel width, which definition is used in thisspecification. For a current per channel width of 10 mA/m a thresholdvoltage V_(th) of about 0.26 V is obtained from FIG. 20B for the MGDwith a second thickness d₂ of 8 nm. Accordingly, threshold voltages ofMGDs can be achieved which are well below the values that can beobtained by using increasing the body effect for thicker gate oxides. Incertain embodiments, the threshold voltage V_(th) of the MOS-gateddiode, defined by a current per channel width of 10 mA/m, is positivebut lower than or equal to about 0.26 V.

The threshold voltage V_(th) in FIG. 20 was obtained for SiO₂ having arelative dielectric constant of 3.9 as gate oxide, i.e., as material ofthe second insulating region 22. Hafnium oxide HfO₂ has e.g., a relativedielectric constant of about 12. Thus the curves illustrated in FIG. 20also correspond to a MGD with HfO₂ as gate oxide but with an increasedsecond thickness d₂ by a factor of about 3.1, which corresponds to theratio between the relative dielectric constant of HfO₂ and 3.9. Forexample, the curves for the 8 nm thick SiO₂ gate oxide correspond alsoto the curves of a MGD which has a second gate electrode 21 insulatedwith an about 25.3 nm thick HfO₂ layer.

According to another embodiment, a semiconductor device includes acommon source metallization, at least a first field-effect structure andat least a second field-effect structure. The first and secondfield-effect structure include a source region of a first conductivitytype which is connected to the common source metallization and a bodyregion of a second conductivity type which is adjacent to the sourceregion. The first field-effect structure further includes a first gateelectrode and a first insulating region of a first equivalent oxidethickness which is arranged at least between the first gate electrodeand the body region. The second field-effect structure further includesa second gate electrode which is connected to the common sourcemetallization and a second insulating region of a second equivalentoxide thickness which is arranged at least between the second gateelectrode and the body region. The second equivalent oxide thickness islower than the first equivalent oxide thickness.

In the context of the present specification, the term “equivalent oxidethickness” intends to describe the average thickness of the insulatingregion between a gate electrode and the body region multiplied with theratio between the relative dielectric constant of the material of theinsulating region and the relative dielectric constant of SiO₂ which isusually 3.9.

In certain embodiments the second equivalent oxide thickness is smallerthan about 8 nm. In other words, the second gate capacitance per unitarea C2 is larger than about 4.3 nF/mm² in certain embodiments. Thesecond equivalent oxide thickness may also be smaller than 6 nm or 4 nmand may even be smaller than 1 nm. Likewise, the second gate capacitanceper unit area C2 may be larger than about 5.7 nF/mm² or about 8.6 nF/mm²and may even be larger than about 34.4 nF/mm².

Integrated MGDs can also be used in reverse conducting IGBTs. FIG. 21illustrates a similar semiconductor device as FIG. 3. However, insteadof the common drain region 41 between the drift region 40 and the drainmetallization 42 in FIG. 3 a highly doped p-type region 41 a is arrangedbetween the drift region 40 and the drain metallization 42 below thefirst trench 10. Thus four alternating layers (N-P-N-P along the dashedline 6) of an n-channel IGBT are formed. The additional PN junctionblocks reverse current flow. This means that IGBTs cannot conduct inreverse mode, unlike a MOSFET. In bridge circuits, where a reversecurrent flow is needed, an additional diode (called a freewheelingdiode) has to be connected antiparallel to the IGBT, i.e., in parallelto the body diode of the IGBT, to conduct a current in the oppositedirection. Note that the source metallization 60 and the drainmetallization 42 are also referred to as emitter metallization 60 andcollector metallization 42 in case of an IGBT. Likewise, a highly dopedn-type region 41 b is arranged between the drift region 40 and thecollector metallization 42 below the second trench 20. The second gateelectrode 21, in contact with the emitter region 80 and the emittermetallization 60, the second insulating region 22, the body region 50and the drift region 40, in contact with the collector metallization 42,form a MOS-gated diode. Typically, the MGD is connected in parallel tothe body diodes 15 and can operate as an integrated freewheeling diodein reverse mode. Again, the capacitance per unit area between the secondgate electrode 21 and the body region 50 is larger than the capacitanceper unit area between the first gate electrode 21 and the body region50. This can again be achieved by choosing the thickness d₂ to besmaller than the first thickness d₁ and/or by choosing a material withhigher dielectric constant for the second insulating region 22 comparedto the dielectric constant of the material of the first insulatingregion 12.

With reference to FIGS. 22-29, manufacturing processes according toseveral embodiments will be explained.

FIG. 22 illustrates a section of a silicon-semiconductor device 100 in avertical cross-section after forming an n-type drain region 41 and afterfurther processes including forming an n-type drift region 40, formingfirst and second trenches 10 and 20, forming insulating bottom portions12 c and 22 c in the lower portions of the first and second trenches 10and 20, respectively, forming respective field plates 16 and 26 andperforming a thermal oxidation process to form a first dielectric SiO₂region or layer 12 a on the side walls in an upper portion of the firsttrenches 10. Typically, the dielectric layer 12 a has a thickness ofabout 30 nm to about 60 nm and also covers the sidewalls of the secondtrenches 20. Thereafter, the first trenches 10 are covered with aphotolithographically structured mask 7 to protect the first trenches10. The resulting semiconductor structure is illustrated in FIG. 23.

According to FIG. 24, an optional ion implantation process, e.g., with Por As, can be carried out. Thereby, higher doped n-type doped regions 27for reducing the channel length of the later formed second field-effectstructure can be formed (see also FIG. 7). As illustrated in FIG. 25, asecond optional ion implantation process, e.g., with P or As, can becarried out to form temporarily higher doped n-type regions 24. After alater ion implantation, e.g., with boron, and subsequent drive-in forforming the p-type body region, the higher doped n-type regions 24 aretransformed into portions of the body region which have a lowereffective p-type doping concentration than the other portions of thebody region. Thereby the threshold voltage V_(th) of the later formedsecond field-effect structure can be reduced further.

Subsequently, the oxide on the side walls in the upper portion of thesecond trench is removed, e.g., by wet-chemical etching. Afterwards themask 7 is removed. The resulting semiconductor structure is illustratedin FIG. 26. Thereafter, a second thermal oxidation process process isused to form a second insulating portion or dielectric layer 22 a on theside walls in an upper portion of the second trench 20 as illustrated inFIG. 27. In the illustrated cross-section, the lateral thickness of thesecond dielectric layer 22 a on the side walls in the upper portion ofthe second trench 20 ranges typically from about 1 nm to about 8 nm, butmay be even smaller than 1 nm. Due to the different lateral thicknessesof the dielectric layers 12 a and 22 a on the side walls in the upperportions of the respective trenches, the later formed second fieldeffect structure has a higher capacitance per unit area between its gateelectrode and the body region 50 than the later formed firstfield-effect structure.

Thereafter, first and second gate electrodes 11 and 21 are formed, e.g.,by a chemical vapor deposition (CVD) and back-etching of highly dopedpoly-Si. Further, a body region 50 and a source region 80 are formed,e.g., by appropriate ion implantation and subsequent drive-in. Inaddition, dielectric portions 70 are formed by deposition. Finally, acommon gate metallization 65 in electrical contact with the first gateelectrodes 11, a common drain metallization 42 in electrical contactwith the drain region 41, and a common source metallization 60 inelectrical contact with the body region 50, the source region 80, thesecond gate electrode 21 and the field plates 16 and 26 are formed. Theresulting MOSFET with integrated MGDs 100 is illustrated in twodifferent vertical cross-section in FIGS. 28 and 29, which correspond tothe lines A and B of FIG. 30 respectively. The contact between thesecond gate electrodes 21 and the source metallization 60 is onlyillustrated in FIG. 29. FIGS. 30 and 31 illustrate plan views of theMOSFET 100 without and with the source metallization 60 and the gatemetallization 65. The reference sign 220 denotes the portion of thesemiconductor device 100 in which the second insulating portion ordielectric layer 22 a was formed. In other words, the portion 220 of thesemiconductor device 100 represents the portion in which the MGDs wereformed. The reference signs 600 and 610 refer to the poly-Si filling,which forms the first and second gate electrodes 11 and 21, and to thegroove contacts for connecting the body regions 50, the source regions80 and the second gate electrode 21 with the source metallization 60,respectively.

In other words, the method described with reference to FIGS. 22-29includes a process of providing a semiconductor body of a firstconductivity type, e.g., of n-type. The semiconductor body typicallyincludes a drift region 40 of the first conductivity type and first andsecond trenches 10 and 20. The first and second trenches 10 and 20 mayalready include suitably formed and insulated field plates 16 and 26,respectively. Further, the method includes forming a source region 80 ofthe first conductivity type and an adjoining body region 50 of a second,i.e., opposite, conductivity type. A first field-effect structure, whichincludes a first gate electrode 11 and a first insulating region 12 aarranged at least between the first gate electrode 11 and the bodyregion 50, and a second field-effect structure, which includes a secondgate electrode 21 and a second insulating region 22 a arranged at leastbetween the second gate electrode 11 and the body region 50, are formedsuch that the capacitance per unit area between the second gateelectrode 21 and the body region 50 is larger than the capacitance perunit area between the first gate electrode 11 and the body region 50.Further, a common source metallization 60 at least in contact to thesource region 80 and the second gate electrode 21 is formed.

Typically, the formed second field-effect structure is a MGD connectedin parallel to the body diode 15 of the first field-effect structure.

Examples for the first field-effect structure include but are notlimited to a MOSFET and a reverse conducting IGBT. For forming an IGBT,the provided semiconductor body may already include highly doped region41 a of the second conductivity type and highly doped region 41 b of thefirst conductivity type adjoining each other and arranged below thedrift region 40.

In further embodiments, the provided semiconductor body already includescompensation structures as used in Superjunction-MOSFETs.

With reference to FIGS. 32-36, manufacturing processes according tocertain embodiments will be explained. The FIGS. 32-35 illustratevertical cross-sections through a semiconductor device 100 along theline B of FIG. 36. FIG. 32 illustrates the semiconductor device 100after forming an n-type drift region 40 and after further processesincluding forming a p-type body region 50, forming an n-type sourceregion 80, forming first and second trenches 10 and 20, forminginsulating portions 70, forming shallow grooves 8 and forming higherdoped p-type contact portions 55. The first and second trenches 10 and20 include respective field plates 16 and 26, respective first andsecond gate electrodes 11 and 21 and respective first and secondinsulating regions 12 and 22. The higher doped contact portions 55 arearranged in the body region 50 below the adjoining grooves 8, andimprove the later formed contact between the body region 50 and thesource metallization 60. The trenches 10 a and 10 b are similar to theillustrated first trench 10. However, they are closest to a firstlateral boundary of the semiconductor device 100 and have no adjoiningsource region 80 to compensate boundary effects. For the same reason,the trench 10 b next to the first lateral boundary of the semiconductordevice 100 and its field plate 16 b extend vertically deeper into thedrift region 40.

A photoresist 7 is deposited and structured such that only the grooves 8a next to the second trench 20 are exposed partially in a portionadjoining the second trench 20 and the contact portions 55 asillustrated in FIG. 33. The other grooves 8 b remain completely filledwith the photoresist 7. Subsequently, the insulating portion 70 whichcover the second gate electrode 21 is removed by etching. This resultsin a structure 100 as illustrated in FIG. 34. Thereafter, thephotoresist 7 is removed, and the source metallization 60 is depositedto electrically connect the source region 80, the body region 50 and thesecond gate electrode 21 as illustrated in FIG. 35. According to theperformed manufacturing processes, the electrical connection between thesource metallization 60 and the second gate electrode 21 is formed as aself-adjusted contact in a shallow trench 620. The shallow trench 620extends vertically not as deep into the semiconductor device 100 as thegrooves 8, which are also filled with the source metallization 60 toform a groove contact 610 to the body region 50, the source region 80and the contact portion 55.

FIG. 36 illustrates a plan view of the MOSFET 100 including the region220 in which the integrated MGD was formed. The reference sign 600 againrefers to the poly-Si filling of the first and second trenches 10, 10 a,10 b and 20. FIG. 36 further illustrates the shallow groove contacts 620between the source metallization 60 and the second gate electrode 21. Inaddition, the groove contacts 610 between the source metallization 60and the body region 50, the source region 80 and the contact portions 55are illustrated.

FIGS. 37-73 illustrate vertical cross-sections through a semiconductordevice 100 after several manufacturing processes for forming thesemiconductor device 100.

The manufacturing processes illustrated with respect to FIGS. 37-48avoid any lithographical processes on the gate oxide and allows the useof different materials, e.g., materials with different work functions,for the first and second gate electrodes 11 and 21. Starting point forthe following process processes is the structure 100 of FIG. 22. Ontothis structure a poly-Si layer 90 and a photoresist are deposited.Thereafter, the photoresist is structured for forming an etching mask 7.In the subsequent wet-chemical or dry poly-Si etching process the secondtrench 20 is exposed in an upper portion. The resulting semiconductorstructure is illustrated in FIG. 37. Thereafter, the etching mask 7 isremoved, the Silicon oxide is etched off the side walls of the secondtrench 20, and a thermal oxidation process is carried out to form thesecond insulating portions 22 a. Afterwards, a second overlaying poly-Silayer 91 is deposited as illustrated in FIG. 38. Subsequently, achemical-mechanical polishing (CMP) process is carried out to remove thepoly-Si above the first and second trenches 10 and 20 and to form a flatsurface.

In an alternative process, a poly-Si layer 90 is deposited onto thestructure illustrated in FIG. 22 and subsequently etched back. On top ofthe surface of the resulting structure a Si₃N₄ layer 92 is deposited,e.g., by a CVD process. This results in a structure as illustrated inFIG. 39. In the next two processes the body region 50 and source region80 are formed by appropriate ion implantation and drive-in. This resultsin a structure as illustrated in FIG. 40. Thereafter, the followingprocesses are subsequently performed. The Si₃N₄ layer 92 is removed by awet-chemical etching. The first trenches 10 are masked by a furtherphotolithographically structured mask 7 b. The poly-Si 91 is removedfrom the second trench 20 by etching. Further, the insulating oxidelayer on the sidewalls of the second trench 20 and on the source region80 adjoining the second trench 20 are removed using an isotropic etchingprocess. The resulting structure is illustrated in FIG. 41. Afterremoving the mask 7 b, a thermal oxidation is carried out to form secondinsulating portion 22 a on the side walls in the upper portion of thesecond trench 20. Typically, the second insulating portions 22 a are, inthe lateral direction of the vertical cross-section illustrated in FIG.42, thinner than the first insulating portions 12 a. Subsequently, thesecond gate electrode 21 is formed by CVD and back-etching of highlydoped poly-Si or a material with a lower work function than highly dopedpoly-Si such as TiN. This results in the structure illustrated in FIG.43.

Finally, dielectric portions 70, a gate metallization 65 in contact withthe first gate electrodes 11, a drain metallization 42 in contact withthe drain region 41, and a source metallization 60 in contact with thesecond gate electrode 21, the body region 50 and the source region 80are formed.

Alternatively, the following processes can be carried out after theprocesses resulting in the structure illustrated in FIG. 40. On top ofthe Si₃N₄ layer 92 an intermediate oxide layer 93 is deposited and aphotolithographically structured mask 7 b is formed thereon for maskingthe first trench 10 as illustrated in FIG. 44. Subsequent etching of theintermediate oxide layer 93, removing of the mask 7 b and wet chemicaletching of the Si₃N₄ layer 92 selective to SiO₂ result in a structure100 as illustrated in FIG. 45. Thereafter, the poly-Si 91 is removed inthe upper portion of the second trench 20 using isotropic etching.Further, the insulating silicon oxide layer on the sidewalls of thesecond trench 20 and on the source region 80 adjoining the second trench20 is removed by isotropic etching. The resulting structure isillustrated in FIG. 46. Subsequently, a thermal oxidation is carried outto form second insulating portions 22 a on the side walls in the upperportion of the second trench 20. The second insulating portions 22 aare, in the lateral direction of the vertical cross-section illustratedin FIG. 47, typically thinner than the first insulating portion 12 a.

Subsequently, the SiO₂ layer formed during the thermal oxidation on thesource region 80 is anisotropically etched back to expose the uppersurface of the source region 80 for later contacting to the sourcemetallization 60. Alternatively, an isotropic etching in combinationwith a protecting plug can be used.

Finally, the connected second gate electrode 21 and source metallization60 are formed by depositing of highly doped poly-Si or a material with alower work function than highly doped poly-Si such as TiN. The resultingMOSFET with integrated MGDs is illustrated in FIG. 48. The illustrateddashed line indicates that the second gate electrode 21 and the gatemetallization 60 can be made of the same material or differentmaterials.

With respect to FIGS. 49-73 five embodiments of manufacturing methodsfor forming a field plate trench semiconductor device 100 will beexplained. They all have in common that at least the sidewalls of thesecond trenches 20 are protected by a protecting region againstoxidation during the thermal oxidation for forming the first insulatingregions 12 a in an upper portion of the first trenches 10. Otherwise,the thermal oxidation for forming the first insulating regions 12 a willalso cause oxidation of the silicon in the boundary region to the secondtrench 20. Typically, this causes a formation of processes in the mesanext to already formed field plates. Depending on the size and theposition of the formed mesa processes, high field strength may occur inparticular during reversed bias. Therefore, a material of low oxygenpermeability under thermal oxidation conditions is typically depositedat least on the side walls in an upper portion of the second trench 20.Thereby, the formation of a process in the drift region 40 next to atransition region between the second insulating portion 22 a and thethicker insulating bottom portion 22 c of the second insulating region22 can be avoided or at least reduced to a size which is smaller thanabout the half of the thickness d₂ of the second insulating portion 22 abetween the second gate electrode 21 and the body region 50. Forexample, the size of the process in the mesa may be only 4 nm or 2 nm oreven smaller. Thus the size of the process in the mesa is significantlyreduced compared to standard processing of MOSFETS which results in mesaprocesses of about 20 nm. Thereby, the electric field magnitude duringreverse bias can be reduced in the drift region 40 close to thetransition region. This will be explained with respect to FIGS. 74A-F.

In short, the embodiments include providing a semiconductor substrate ofa first conductivity type. At least a first trench 10 and at least asecond trench 20 are etched into the semiconductor substrate. A firstoxide layer which covers at least a lower portion of the walls of thefirst trench 10 and a lower portion of the walls of the second trench 20is formed. Subsequently, a first conductive region 16 at least in thelower portion of the first trench 10 and at least a second conductiveregion 26 in the lower portion of the second trench 20 are formed. Thisis typically done by CVD and back-etching of highly conductive poly-Si.A thermal oxidation process is performed to form a first insulatingregion 12 a on the side walls in an upper portion of the first trench10. During this thermal oxidation process the second trench 20 isprotected such that the semiconductor substrate forming the walls of thesecond trench 20 is not or almost not oxidized. Thereafter, a secondinsulating region 22 a is formed on the side walls in an upper portionof the second trench 20. Subsequently, a first gate electrode 11 in theupper portion of the first trench 10 and a second gate electrode 21 inthe upper portion of the second trench 20 are formed. Further, a sourceregion 80 of the first conductivity type and a body region 50 of asecond conductivity type are formed such that they are adjoining.Typically, the drift region 40 adjoining the body region 50 is therebyfinally formed such that the first and second trenches 10 and 20 extendin a vertical direction below the pn-junction between the body region 50and the drift region 40. Thereafter, a source metallization 60, which isat least in contact to the source region 80 and the second gateelectrode 21, is formed. Typically, the body region 50 is alsoelectrically connected to the source metallization 60. Further, thefirst and second conductive region 16 and 26 are typically alsoelectrically connected to the source metallization 60 and operate asfield plates 16 and 26.

According to an embodiment the first insulating region 12 a and secondinsulating region 22 a are formed such, that the capacitance per unitarea between the second gate electrode 21 and the body region 50 ishigher than the capacitance per unit area between the first gateelectrode 11 and the body region 50.

According to a further embodiment, the second gate electrode 21 extendsless deep into the drift region 40 than the first gate electrode 11.This further reduces the electric field magnitude during reverse mode inthe drift region 40 next to the transition region of the secondinsulating region 22. Typically, this is also achieved by the fivemethods for forming a field plate trench semiconductor device explainedin the following.

Referring now to FIGS. 49-56 the first of the five embodiments forforming a field plate trench semiconductor device 100 will be explainedin detail. FIG. 49 illustrates the structure 100 after providing ann-type Si-substrate which includes a drift region 40 and a higher dopeddrain region 41 and after further processes including etching of twofirst trenches 10 and a second trench 20 into the semiconductorsubstrate, forming a first oxide layer 71 on the semiconductor substratesuch that the side walls and the bottom wall of the first and secondtrench 10 and 20 are also covered and forming first conductive regions16 in a lower portion of the first trench 10 and a second conductiveregion 26 in a lower portion of the second trench 20. Typically, firstand second insulating bottom portion 12 c and 22 c are later at leastpartially formed from the lower portions of the first oxide layer 71next to the first and second conductive regions 16 and 26, respectively.Further, the first and second conductive region 16 and 26 are typicallyformed by CVD and back-etching of highly doped poly-Si. Thereafter, aSi₃N₄ mask 92 is formed by providing a nitride layer overlying the firstoxide layer 71, using e.g., CVD and subsequent structuring of thenitride layer. The resulting structure 100 is illustrated in FIG. 50.The Si₃N₄ mask 92 is used to protect the second trench 20 against thesubsequent etching of the first oxide layer 71. This etching processresults in exposing the upper surface of the first conductive regions 16and the side walls of the first trenches 10 in an upper portion asillustrated in FIG. 51. This also leads to the formation of firstinsulating bottom portion 12 c in the lower portion of the firsttrenches 10. Now a first insulating portion 12 a can be formed bythermal oxidation on the side walls in the upper portion of the firsttrench 10. As can be seen in FIG. 52 the thermal oxidation processresults in the formation of processes in the drift region 40 next to thetransition regions 13 between the first insulating bottom portion 12 cand the first insulating portion 12 a of the first insulating region. Inother words, the vertical boundaries between the mesa and the firstinsulating region 12, which is formed by the insulating bottom portion12 c and the first insulating portion 12 a, deviates from theillustrated straight lines f. In the illustrated cross-section, thelateral process of the mesa next to the transition regions 13 istypically about the half of the lateral thickness of the firstinsulating portion 12 a. The sidewalls of the second trench 20 are,however, completely protected by the remaining portions of the firstoxide layer 71 and the mask 92 against thermal oxidation. Thus, duringthe process of performing the thermal oxidation for forming the firstinsulating portion 12 a on the side walls in the upper portion of thefirst trench 10, the Si-substrate forming the side walls of the secondtrench 20 is practically not oxidized. Thereby, the formation of aprocess in the mesa close to second trench 20 can be avoided.

During thermal oxidation, third insulating portions 12 b are typicallyalso formed on the first conductive regions 16. Typically, the thirdinsulating portions 12 b are thicker than the first insulating portions12 a in the direction of the oxide growth. This is because the growthrate of the thermal oxide is higher for highly doped poly-Si used asmaterial of the conductive regions 16 compared to the weaker dopedsilicon of the drift region 40.

Thereafter, the first trenches 10 are masked and subsequently an etchingprocess is performed to expose the upper portion of the second trench20. FIG. 53 illustrates in addition to FIG. 52 a photolithographicallystructured mask 7, which protects the first trenches 10. FIG. 54illustrates the structure 100 after a HF-dipping and an isotropic plasmaetching to remove the Si₃N₄ mask 92 and the exposed oxide. Thereby, theupper surface of the second conductive regions 26 and the side walls ofthe second trenches 20 are exposed in the upper portions the secondtrenches 20. Thereafter, the mask 7 is removed and a second insulatingregion 22 a is formed on the side walls in the upper portion of thesecond trench 20 by thermal oxidation as illustrated in FIG. 55.Alternatively and/or in addition, a dielectric material such as Si₃N₄,SiO_(x)N_(y) or HfO₂ may be deposited on the side walls in the upperportion of the second trench 20 to form the insulating portion 22 a.

Typically, the second insulating portion 22 a is formed such, that ithas a higher dielectric constant and/or lower thickness in the lateraldirection of the cross-section illustrated in FIG. 55 than the firstinsulating portions 12 a.

In addition, a fourth insulating portion 22 b is typically formed duringformation the second insulating portions 22 a. The thickness of thefourth insulating portions 22 b in the vertical direction may beadjusted e.g., by deposition of further dielectric material such that alater formed second gate electrodes 21 extends e.g., 50 nm or 100 nmless deep into the drift region 40 than a later formed first gateelectrode 11.

Typically, the upper surface of the mesas adjoining the second trench 20is also covered with a dielectric layer which was also formed during theprocess of forming the insulating portions 22 a.

Subsequently, highly doped poly-Si is deposited and etched back to fillthe first and second trenches 10 and 20 at least partially. Thereby,first and second gate electrodes 11 and 21 are formed in the upper partof the first trench 10 and second trench 20, respectively. The resultingsemiconductor device structure 100 is illustrated in FIG. 56.

Typically, the minimum distance between the first field plate 16 and thefirst gate electrode 11 is larger than the minimum distance between thesecond field plate 26 and the second gate electrode 21.

Thereafter, a source region 80 and an adjoining body region 50 areformed by ion implanting. A source metallization 60 at least in contactto the source region 80 and the second gate electrode 21 is formed usingstandard techniques. At least a part of the typically formed dielectriclayer on top of the mesas adjoining the second trench 20 is typicallyremoved, e.g., by etching, prior to depositing the source metallization60.

The second embodiment for forming a field plate trench semiconductordevice 100 includes the same initial process processes which result inthe semiconductor structure illustrated in FIG. 52. Thereafter, aHF-dipping and an isotropic nitride etching e.g., with hot phosphoricacid is performed to remove the Si₃N₄ mask 92 as illustrated in FIG. 57.A photolithographically structured mask 7 b which protects the firsttrenches 10 is formed on the semiconductor structure 100. Subsequently,the oxide layer is etched back to expose an upper portion of the secondtrench 20. The resulting structure 100 is illustrated in FIG. 58.Thereafter, the mask 7 b is removed and a typically thin secondinsulating region 22 a is formed on the side walls in the upper portionof the second trench 20 by a thermal oxidation process or by a CVDprocess. Thus a similar semiconductor structure as already illustratedin FIG. 55 is obtained. Again, the second insulating region 22 a mayhave a higher effective permittivity than the first insulating region 12a.

The subsequent manufacturing processes for forming a field plate trenchsemiconductor device are in accordance with the manufacturing processeswhich have been explained above with respect to FIG. 56.

With respect to FIGS. 59 to 63 a further embodiment for forming a fieldplate trench semiconductor device will be explained. FIG. 59 illustratesthe structure 100 after providing an n-type Si-substrate with a driftregion 40 and a higher doped drain region 41 and after further processesincluding etching of at least a first trenches 10 and at least a secondtrench 20 into the semiconductor substrate, forming a first oxide layer71 on the semiconductor substrate such that the walls of the first andsecond trench 10 and 20 are also covered and forming first conductiveregion 16 in a lower portion of the first trench 10 and a secondconductive region 26 in a lower portion of the second trench 20.Typically, first and second conductive regions 16 and 26 are formed bythe following subsequent processes: CVD of highly doped poly-Si, maskingthe second trench 20 with a first photolithographically structured mask7, and back-etching of highly doped poly-Si. Thereafter, the firstphotolithographically structured mask 7 used for protecting the secondtrench 20 during the back etching of the poly-Si is removed. A secondphotolithographically structured mask 7 a is formed to protect thesecond trench 20 during the subsequent etching of the first oxide layer71. The resulting structure 100 is illustrated in FIG. 60. The secondphotolithographically structured mask 7 a is removed and a thermaloxidation process is performed to form insulating portions 12 a on theside walls of the upper part of the first trenches 10. During thermaloxidation process the sidewalls of the second trench 20 are completelyprotected against thermal oxidation by the remaining portions of thefirst oxide layer 71 and the highly doped poly-Si in the second trench20. In parallel, third insulating portions 12 b on the upper surface ofthe first conductive regions 16 are formed and the first insulatingregion 71 is closed by a formed insulating portion 71 b on the secondconductive region 26 as indicated in FIG. 61. In other words, the secondtrench 20 is completely filled with the first oxide layer 71 and thesecond conductive region 26 during the thermal oxidation process forforming the first and third insulating portions 12 a and 12 b of thefirst insulating region 12.

FIG. 61 further illustrates a photolithographically structured mask 7 bwhich protects the first trenches 10 during the subsequent process ofdisposing an upper portion of the second trench 20 by etching the oxidelayer. Thereafter, the mask 7 b is removed, and second insulatingportions 22 a on the side walls of the upper portion of the secondtrench 20 are formed by a further thermal oxidation process and/or byCVD. In parallel, fourth insulating portions 22 b are typically formedon the exposed surfaces of the second conductive regions 26 as indicatedin FIG. 62. Further, the fourth insulating portions 22 b may also beformed on the second insulating bottom portion 22 c, e.g., by CVD.Thereafter, first and second gate electrodes 11 and 21 are formed bydeposition of e.g., highly doped poly-Si and subsequent back etching ofthe deposited poly-Si. In the cross-section of the structure 100illustrated in FIG. 63, the second gate electrode is not simplyconnected. Further, the first gate electrodes 11 extends deeper into thedrift region 40 than the second gate electrodes 21. Typically, the firstgate electrodes 11 extend more than 50 μm, e.g., 100 μm, deeper into thedrift region 40 than the second gate electrodes 21. The subsequentmanufacturing processes for forming a field plate trench semiconductordevice are again similar to those explained with respect to FIG. 56.

The fourth embodiment for forming a field plate trench semiconductordevice is similar to the previous method up to the processes resultingin the structure 100 of FIG. 61. However, the mask 7 b, which protectsthe first trenches 10, has, in the illustrated cross-section of FIG. 64,a smaller opening above the second trench 20. In FIG. 64 the openingonly exposes the insulating portion 71 b of the first oxide layer 71above the second conductive region 26. Subsequently, an oxide etchingprocess is performed to remove the insulating portion 71 b asillustrated in FIG. 65. Thereafter, the poly-Si in the second trench 20is etched back followed by a further oxide etching process to expose anupper part of the second trench 20. This is illustrated in FIG. 66.Subsequently, the photolithographically structured mask 7 b is removed.A further thermal oxidation process and/or a further CVD process isperformed to form second insulating portions 22 a on the side walls ofthe upper part of the second trench 20 and fourth insulating portions 22b on an upper surface of the second conductive regions 26. This resultsin a semiconductor structure as illustrated in FIG. 67. Thereafter,first and second gate electrodes 11 and 21 are formed by deposition ofe.g., highly doped poly-Si and subsequent back etching of the depositedhighly doped poly-Si. This is illustrated in FIG. 68. The subsequentmanufacturing processes for forming a field plate trench semiconductordevice have already explained with respect to FIG. 56.

The fifth embodiment for forming a field plate trench semiconductordevice 100 include the same initial process processes resulting in thesemiconductor structure 100 illustrated in FIG. 59. Thereafter, thefirst mask 7 is removed and the first oxide layer 71 is etched back.This results in the semiconductor structure 100 of FIG. 69. A thermaloxidation is carried out for forming first insulating portions 12 a onthe side walls in the upper portion of the first trenches 10 asillustrated in FIG. 70. During the thermal oxidation process thesidewalls of the second trench 20 are completely protected againstthermal oxidation by the remaining portions of the first oxide layer 71and the highly doped poly-Si in the second trench 20. In parallel, anoxide layer 12 d is formed on an upper surface of the mesas and thesecond conductive region 26. A photolithographically structured mask 7 bis formed, which protects the first trenches 10 during the subsequentprocess of disposing an upper portion of the second trench 20 by etchingthe oxide layer 12 d and back-etching of the first oxide layer 71. Aftersubsequent removing of mask 7 b, second insulating portions 22 a areformed by a further thermal oxidation process and/or by CVD on the sidewalls of the upper portion of the second trench 20. In parallel, fourthinsulating portions 22 b are typically formed on the upper surface ofthe second conductive regions 26 and on the second insulating bottomportion 22 c as indicated in FIG. 72. Thereafter, first and second gateelectrodes 11 and 21 are formed by deposition of e.g., highly dopedpoly-Si and subsequent back-etching of the deposited highly dopedpoly-Si as illustrated in FIG. 73. The subsequent manufacturingprocesses for forming a field plate trench semiconductor device aresimilar to those explained with respect to FIG. 56.

Referring now to FIG. 74, the improved performance of the semiconductordevices 100, which are produced in accordance with the above describedembodiments for forming a field plate trench semiconductor device, willbe explained. During reverse mode and higher load, the semiconductordevices 100 may be driven into an Avalanche mode. An Avalanche processduring reverse mode may result in entrapment of charges in the gateoxide or gate insulation. This is likely to change the characteristicssuch as forward voltage drop of the semiconductor device in forwardmode. Therefore, it is desirable to avoid high field strength close to athin gate oxide. FIGS. 74A-D illustrate the magnitude of the electricfield as an overlay of a contour plot and a density plot (darker regionscorrespond to higher electric field magnitudes) with linear scaling inreverse mode. Vertical cross-sections through four different devices arecompared. Each of the sections 5 a includes a mesa and the half of therespective adjoining trenches. For the simulation, a vanishing currentwas assumed at the illustrated lateral boundaries. At the lower and theupper vertical boundary the electric potential is fixed to drainpotential and source potential, respectively. The voltage differencebetween drain and source was V_(DS)=30V. Further, the upper boundary ofthe sections 5 a goes through the interface between the body region 50and the source region 80. FIG. 74A illustrates the electric fieldmagnitude between two equal MOSFET field-effect structures having a 35nm thick SiO₂ gate oxide between the body region 50 and the respectivegate electrode 11. This structure is also referred to as single gateoxide structure. Further, two lines e and f are drawn. They cross closeto the left process of the mesa adjoining the transition region of thefirst insulating region 12 from a first insulating portion between thegate electrode 11 and the body region 50 to a first insulating bottomportion between a first field plate 16 and the drift region 40. Thefirst insulating bottom portion has a larger lateral extension than thefirst insulating portion. In other words, the transition region of thefirst insulating region 12 is the region next to the first gateelectrode 11, in which the lateral extension, in the illustratedcross-section, of the first insulating region 12 changes. The transitionregions are typically close to the transition between an essentiallyvertical boundary between the gate electrode 11 and the gate oxide 12and an essentially horizontal or lateral lower boundary between the gateelectrode 11 and the gate oxide 12. For clarity reasons, only one of thetwo processes in FIG. 74A is designated with the reference sign 9. InFIG. 74B the electric field magnitude is plotted for the mesa between aMGD on the left and a MOSFET on the right. The MGD has a 5 nm thick gateoxide between the body region 50 and the second gate electrode 21 andthe MOSFET has a 35 nm thick gate oxide between the body region 50 andthe first gate electrode 11. The two lines e and f cross close to theleft process of the mesa adjoining the illustrated right transitionregion of the second insulating region 22 from the 5 nm thick portionbetween the gate electrode 12 and the body region 50 to a lower thickerportion. This structure is denoted in FIG. 74 as dual gate oxidestructure. The structure illustrated in FIG. 74C is similar to the oneillustrated in FIG. 74B, but the left process of the mesa adjoining theright transition region was avoided during manufacturing as has beenexplained above. Therefore, this structure is denoted in FIG. 74 as dualgate oxide no process structure. In other word, the mesa is, in theillustrated cross-section, practically straight down to a vertical depthinto which the field plates 16 and 26 extend to. The structureillustrated in FIG. 74D is similar to the one illustrated in FIG. 74C,i.e., the left process of the mesa adjoining the right transition regionwas avoided during manufacturing. Further, the second gate electrode 21extends not as deep into the drift region 40 as the first gate electrode11. The first gate electrode 11 extends about 100 μm deeper into thedrift region 40 compared to the second gate electrode 21. Consequently,the right transition region of the second insulating region 22 is alsoarranged higher by a vertical distance dy of about 100 μm. Thisstructure is denoted in FIG. 74 as dual gate oxide no process IIstructure. FIG. 74E illustrates the field magnitude along the lines efrom top to bottom of the lines e in the mesa. FIG. 74F illustrates thefield magnitude along lines f from top left to right bottom of the linese in the mesa. In both FIGS. 74E and 74F the curves a, b, c and dcorrespond to the FIGS. 74A, 74B, 74C and 74D, respectively. As can beappreciated from the heights of the first peaks of the curvesillustrated in FIG. 74E and the curves in FIG. 74F the electric fieldmagnitude in the transition region close to the thin gate oxide of theMGD can be reduced by avoiding a process in the mesa and/or by extendingthe first gate electrode 11 deeper into the drift region 40 than thesecond gate electrode 21. Thereby, the charge generation, the risk ofcharge entrapment in the gate oxide and the risk of latch-up of the MGDduring reversed current flow and Avalanche conditions can be reduced.

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat a variety of alternate and/or equivalent implementations may besubstituted for the specific embodiments shown and described withoutdeparting from the scope of the present invention. This application isintended to cover any adaptations or variations of the specificembodiments discussed herein. Therefore, it is intended that thisinvention be limited only by the claims and the equivalents thereof.

What is claimed is:
 1. A semiconductor device, comprising: a sourcemetallization; a source region of a first conductivity type, the sourceregion being connected to the source metallization; a body region of asecond conductivity type adjacent to the source region; a drift regionof a first conductivity type adjacent to the body region; a thirdconductive region of a second conductivity type buried within the driftregion; and a trench extending from the source region through the bodyregion and at least partially into the drift region; the trenchadjoining the third conductive region and including a conductive plugand an insulating layer, which is arranged between the conductive plugand the body region, the conductive plug forming an Ohmic connectionbetween the source metallization and the third conductive region; theconductive plug, the insulating layer and the body region forming afield effect structure.
 2. The semiconductor device of claim 1, whereinthe body region is electrically connected to the source metallization.3. The semiconductor device of claim 1, further comprising a furtherfield-effect structure having a gate capacitance per unit area.
 4. Thesemiconductor device of claim 3, wherein the field effect structure hasa capacitance per unit area higher than the gate capacitance per unitarea of the further field effect structure.
 5. The semiconductor deviceof claim 1, the third conductive region and the body region havingrespective doping concentrations, wherein the doping concentration ofthe third conductive region is higher than the doping concentration ofthe body region.
 6. The semiconductor device of claim 1, wherein theinsulating layer is arranged between the conductive plug and the sourceregion.
 7. The semiconductor device of claim 1, wherein thesemiconductor device is a power semiconductor device.
 8. A convertercircuit, comprising a high-side switch and at least one low-side switchconnected to the high-side switch, the at least one low-side switchcomprising: a source metallization; a source region of a firstconductivity type, the source region being connected to the sourcemetallization; a body region of a second conductivity type adjacent tothe source region; a drift region of a first conductivity type adjacentto the body region; a third conductive region of a second conductivitytype buried within the drift region; and a trench extending from thesource region through the body region and at least partially into thedrift region; the trench adjoining the third conductive region andincluding a conductive plug and an insulating layer, which is arrangedbetween the conductive plug and the body region, the conductive plugforming an Ohmic connection between the source metallization and thethird conductive region.
 9. The circuit of claim 8, wherein theconductive plug, the insulating layer and the body region form a fieldeffect structure having a gate capacitance per unit area.
 10. Thecircuit of claim 9, further comprising a further field-effect structurehaving a gate capacitance per unit area lower than the gate capacitanceper unit area of the field effect structure.